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| SML1001RHN SML901RHN0 TO-258 Package Outline. Dimensions in mm (Inches) 17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (0.707) 0.88 (0.035) 4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D 17.96 (0.707) 17.70 (0.697) 13.84 (0.545) 13.58 (0.535) 123 4.19 (0.165) 3.94 (0.155) Dia. 19.05 (0.750) 12.70 (0.500) 5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ. 21.21 (0.835) 20.70 (0.815) 3.56 (0.140) BSC G S Pin 1 - Drain Pin 2 - Source Pin 3 - Gate MAXIMUM RATINGS (Tcase =25C unless otherwise stated) Parameter Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 VDSS ID IDM VGS PD TJ , TSTJ TL SML 901RHN 1001RHN 900 1000 10 40 30 250 2 -55 to +150C 300 Unit V A A V W W/C C Gate - Source Voltage Total Power Dissipation @ Tcase = 25C Derate above 25C Operating and Storage Junction Temperature Range Lead Tempeature (0.063" from Case for 10 Sec.) STATIC ELECTRICAL RATINGS (Tcase =25C unless otherwise stated) Characteristic / Test Conditions / Part Number VGS = 0V BVDSS Drain - Source Breakdown Voltage ID = 250mA IDSS IGSS ID(ON) Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current On State Drain Current 2 VDS = VDSS VDS = 0.8VDSS VGS = 30V VGS = 10V VDS = VGS ID = 1.0mA VGS = 10V , ID = 0.5 ID [Cont.] TC = 125C VDS = 0V 10 2 4 1.00 SML1001RHN SML901RHN Min. 1000 900 250 1000 100 Typ. Max. Unit V mA nA A V VDS > ID(ON) x RDS(ON) Max VGS(TH) Gate Threshold Voltage RDS(ON) Static Drain - Source On State Resistance 2 W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/98 SML1001RHN SML901RHN0 DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge3 Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions. VGS = 0V VDS = 25V f = 1MHz VGS = 10V ID = ID [Cont.] VDD = 0.5 VDSS VDD = 0.5 VDSS ID = ID [Cont.] VGS = 15V RG = 1.8W Min. Typ. 2460 360 105 90 9.3 47 15 16 64 24 Max. Unit 2950 500 160 130 14 70 30 32 95 48 ns nC pF SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic / Test Conditions. Continuous Source Current (Body Diode) Pulsed Source Current1 (Body Diode) Diode Forward Voltage2 VGS = 0V IS = - ID [Cont.] IS = - ID [Cont.] dls / dt = 100A/ms 320 2.2 636 4.5 Part Number Min. Typ. Max. Unit 10 A 40 1.3 A V Reverse Recovery Time Reverse Recovery Charge 1200 9 ns C SAFE OPERATING AREA CHARACTERISTICS SOA1 SOA2 ILM Characteristic / Test Conditions / Part Number Safe Operating Area VDS = 0.4 VDSS , IDS = PD / 0.4 VDSS , t = 1 Sec Safe Operating Area Inductive Current Clamped IDS = IDS [Cont.] , VDS = PD / ID [Cont.] , t = 1 Sec Min. 250 250 40 Typ. Max. Unit W A THERMAL CHARACTERISTICS (Tcase =25C unless otherwise stated) RqJC Characteristic / Test Conditions. Junction to Case Junction to Ambient Min. Typ. Max. Unit 0.50 C/W 40 C/W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/98 |
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